gan on sic hemt pulsed power transistor 15 w, dc - 3.5 ghz rev. v1 magx-000035-015000 1 1 m/a-com technology solutions inc. (macom) and its affiliates reserv e the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 1 magx-000035-01500s * restrictions on hazardous substanc es, european union directive 2002/95/ec. part number description magx-000035-015000 flanged, bulk packaging magx-l20035-015000 sample board (1.2 - 1.4 ghz, flanged) magx-000035-01500s flangeless, bulk packaging magx-l20035-01500s sample board (1.2 - 1.4 ghz, flangeless) ordering information magx-000035-015000 (flanged) features ?? gan on sic depletion mode transistor ?? common-source configuration ?? broadband class ab operation ?? thermally enhanced package (flanged: cu/w, flangeless: cu) ?? rohs* compliant ?? +50v typical operation ?? mttf = 600 years (t j < 200c) primary applications ?? commercial wireless infrastructure (wcdma, lte, wimax) ?? air traffic control radar - commercial ?? weather radar - commercial ?? military radar - military ?? public radio ?? industrial, scientific and medical ?? satcom ?? instrumentation description the magx-000035-01500x is a gold-metalized unmatched gallium nitride (gan) on silicon carbide rf power transistor suitable for a variety of rf power amplifier applications. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today?s demanding application needs. the magx-000035-01500x is constructed using a thermally enhanced flanged ( cu/w) or flangeless ( cu) ceramic package which provides excellent thermal performance. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. magx-000035-01500s (flangeless)
gan on sic hemt pulsed power transistor 15 w, dc - 3.5 ghz rev. v1 magx-000035-015000 2 2 m/a-com technology solutions inc. (macom) and its affiliates reserv e the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 2 magx-000035-01500s electrical specifications 1 : freq. = 1.2 - 1.4 ghz, t a = 25c parameter test conditions symbol min. typ. max. units rf functional tests: v dd = 50 v, i dq = 15 ma, 1 ms pulse, 10% duty output power p in = 0.5 w p out 15.0 17.7 - w power gain p in = 0.5 w g p 14.8 15.5 - db drain efficiency p in = 0.5 w d 55 63 - % load mismatch stability p in = 0.5 w vswr-s - 5:1 - - load mismatch tolerance p in = 0.5 w vswr-t - 10:1 - - droop p in = 0.5 w droop - 0.1 0.4 db 1. electrical specifications meas ured in macom rf evaluation board. parameter test conditions symbol min. typ. max. units dc characteristics drain-source leakage current v gs = -8 v, v ds = 175 v i ds - - 750 a gate threshold voltage v ds = 5 v, i d = 2 ma v gs (th) -5 -3 -2 v forward transconductance v ds = 5 v, i d = 500 ma g m 0.35 - - s input capacitance v ds = 0 v, v gs = -8 v, f = 1 mhz c iss - 4.4 - pf output capacitance v ds = 50 v, v gs = -8 v, f = 1 mhz c oss - 1.9 - pf reverse transfer capacitance v ds = 50 v, v gs = -8 v, f = 1 mhz c rss - 0.2 - pf dynamic characteristics electrical characteristics: t a = 25c correct device sequencing turning the device on 1. set v gs to the pinch-off (v p ), typically -5 v. 2. turn on v ds to nominal voltage (+50v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs.
gan on sic hemt pulsed power transistor 15 w, dc - 3.5 ghz rev. v1 magx-000035-015000 3 3 m/a-com technology solutions inc. (macom) and its affiliates reserv e the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 3 magx-000035-01500s absolute maximum ratings 2,3,4 2. operation of this device above any one of these parameters may cause permanent damage. 3. channel temperature directly affects a device's mttf. channel temperature should be kept as low as possible to maximize lif etime. 4. for saturated performance it is recommended that the sum of (3*v dd + abs(v gg )) <175 v. 5. junction temperature (t j ) = t c + ? jc * ((v * i) - (p out - p in )) typical transient thermal resistances: 1 ms pulse, 10% duty cycle, ? jc = 5.0c/w for t c = 85c, t j = 132c @ 50 v, 520 ma-pk, p out = 17.0 w, p in = 0.5 w parameter absolute max. input power p in (nominal) + 3 db drain supply voltage, v dd +65 v gate supply voltage, v gg -8 v to 0 v supply current, i dd 800 ma power dissipation (p avg ), pulsed @ 85c 10.3 w junction temperature 5 200c operating temperature -40c to +95c storage temperature -65c to +150c mounting temperature see solder reflow profile esd min. - charged device model (cdm) 150 v esd min. - human body model (hbm) 500 v mttf (t j <200c) 600 years
gan on sic hemt pulsed power transistor 15 w, dc - 3.5 ghz rev. v1 magx-000035-015000 4 4 m/a-com technology solutions inc. (macom) and its affiliates reserv e the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 4 magx-000035-01500s test fixture assembly ( 1.2 - 1.4 ghz, 1 ms pulse, 10% duty, v dd = 50 v, idq = 15 ma ) contact factory for gerber file or additional circui t information. test fixture impedances f (ghz) z if ( ? ) z of ( ? ) 1.2 1.4 + j3.5 2.5 + j3.5 1.3 1.3 + j3.8 2.7 + j3.9 1.4 1.8 + j4.0 3.1 + j4.2 parts list reference designator part vendor c4 0402, 5.1 pf, 0.1 pf atc c15 0603, 6.8 pf, 0.1 pf atc c2 0603, 82 pf, 10% atc c16 0603, 100 pf, 10% atc c1, c10 0402, 1000 pf, 100 v, 5% atc c8 0603, 30 pf, 10% atc c13 0805, 1 f, 100 v, 20% atc c14 0402, 12 pf, 10% atc c17 100 f, 160 v, electrolytic capacitor panasonic c3, c6, c7, c9, c11, c12, r2 do not populate - r3 240 ? , 0603, 5% panasonic l1, r1 1.0 ? , 0402, 5% panasonic r4 1.0 ? , 1206, 5% panasonic r5 10 ? , 0402, 5% panasonic l3, l6 0402, 3.9 nh, 2% coilcraft l2, r6 0402, 0.0 ? resistor panasonic j1, j2 sma connector tyco electronics
gan on sic hemt pulsed power transistor 15 w, dc - 3.5 ghz rev. v1 magx-000035-015000 5 5 m/a-com technology solutions inc. (macom) and its affiliates reserv e the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 5 magx-000035-01500s typical performance curves application section 1.2 - 1.4 ghz, 1 ms pulse, 10% duty, v dd = 50 v, idq = 15 ma, t a = 25c output power and gain vs. input power drain efficiency vs. output power
gan on sic hemt pulsed power transistor 15 w, dc - 3.5 ghz rev. v1 magx-000035-015000 6 6 m/a-com technology solutions inc. (macom) and its affiliates reserv e the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 6 magx-000035-01500s outline drawing magx-000035-015000 (flanged)
gan on sic hemt pulsed power transistor 15 w, dc - 3.5 ghz rev. v1 magx-000035-015000 7 7 m/a-com technology solutions inc. (macom) and its affiliates reserv e the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 7 magx-000035-01500s outline drawing magx-000035-01500s (flangeless)
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